Just as silicon-based solid-state transistors quickly replaced vacuum tube technology and similarly the Bipolar Junction Transistor (BJT) to Field Effect Transistor (FET) transition, SET group identified vertical Gallium Nitride (GaN) and Silicon Carbine (Sic) as the next semiconductor materials with new architectures that would inevitably power the world. Today, this power conversion evolution gains more and more momentum every day as system designers and users embrace the clear advantages and benefits of WBG-based power.
Although this fundamental evolution has abundant advantages, the technical challenges for its success are far from trivial. However, the technical team at SET group has created novel solutions to overcome the unique challenges of high frequency operation, high heat fluxes, and complex magnetics. In addition, SET group understands the challenges for adoption do not stop on the technical field. SET group's holistic approach doesn’t end in the laboratory. To ensure commercial success, SET group has assembled an experienced and impactful Board of Directors that provides actionable feedback and direction.