GaN and SiC offer unprecedented advantages over Si for an increase in voltage, efficiency, and reliability with reduced size, weight, and cost. Additionally, novel circuit topologies and control circuits achieve lossless switching and enable further benefits to be realized.
The combination of WBG devices and Zero Voltage Switching (ZVS) at high frequencies (+1MHz), significantly impacts the power density, power capacity, and power efficiencies of any power conditioning system. High frequency operation drastically reduces the size of passive components such as inductors and capacitors. GaN and SiC devices are designed to handle higher current and higher voltages, reducing the number of switching components in any given system and thereby increasing reliability while further improving on this reliability through GaN & SiC’s ability to also operate efficiently at higher temperatures. GaN and SiC devices also intrinsically have lower parasitic elements that reduce switching losses and increase efficiency.
To successfully switch GaN and SiC devices at any given frequency, unlike Si devices, a tight gate voltage range can be required (+/- 1V from nominal). If a stable and consistent driving voltage is achieved, reaching MHz level switching speeds brings about additional challenges.
The average Switch Mode Power Supply (SMPS) today, that utilizes Si, is driven at an average frequency in the hundreds of kHz. Once a system reaches the MHz level, high frequency elements have an increased effect and impact on system efficiency and stability. When operating multiple GaN or SiC devices at high frequencies, unlike in low-power systems, high power switching architectures present unique control scheme and operation challenges.
The same properties that allow GaN and SiC to switch at high frequencies, are also the same properties that can make high speed power controls challenging when dealing with EMI, internal parasitics, and synchronization. In addition, successful GaN or SiC integration heavily relies on the proper switching topology and design considerations. The room for error at this fundamental level is small when considering GaN or SiC as a viable solution.
Through the years, SET group has been heavily invested in overcoming the challenges encountered during the integration of GaN and SiC power devices.
GaN and SiC offer unprecedented advantages over Si for an increase in voltage, efficiency, and reliability with reduced size, weight, and cost
Additive Manufactured Thermal Management Systems increase performance, reduce size & weight, and provide modularity & scalability
The most cost effective solution for high frequency high power density power conversion
From circuit topologies to sub-system construction design, SET group is your development partner
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